在半导体材料的制备过程中，每一道工序都涉及到清洗，而且清洗的好坏直接影响下一道工序，甚影响器件的成品率和可靠性。由于ULSI集成度的迅速提高和器件尺寸的减小，对于晶片表面沾污的要求更加严格，ULSI工艺要求在提供的衬底片上吸附物不多于500个/m2×0.12um，金属污染小于 1010atom/cm2。晶片生产中每一道工序存在的潜在污染，都可导致缺陷的产生和器件的失效。
In the preparation process of semiconductor materials, each process involves cleaning, and the quality of cleaning directly affects the next process, and even affects the yield and reliability of devices. Due to the rapid improvement of ULSI integration and the reduction of device size, the requirements for chip surface contamination are more stringent. ULSI process requires that the adsorbates on the provided substrate should not be more than 500/m2 × 0.12um, metal pollution is less than 1010atom/cm2. The potential pollution in each process of wafer production can lead to defects and device failure.
因此，硅片的清洗引起了人士的重视。以前很多厂家都用手洗的方法，这种方法人为的因素较多，一方面容易产生碎片，经济效益下降，另一方面手洗的硅片表面洁净度差，污染严重，使下道工序化抛腐蚀过程中的合格率较低。所以，硅片的清洗技术引起了人们的重视，找到一种简单有效的清洗方法是当务之急。本文介绍了一种超声波清洗技术，其清洗硅片的效果显著，是一种值得推广的硅片清洗技术。
Therefore, the cleaning of silicon wafers has attracted the attention of professionals. In the past, many manufacturers have used the hand-washing method. This method has many human factors. On the one hand, it is easy to produce debris and reduce economic benefits. On the other hand, the surface cleanliness of hand-washing silicon wafers is poor, and the pollution is serious, making the qualification rate in the next process of chemical polishing and corrosion low. Therefore, the cleaning technology of silicon wafers has attracted people's attention. It is urgent to find a simple and effective cleaning method. This paper introduces a kind of ultrasonic cleaning technology, which has a remarkable effect on cleaning silicon wafers and is worth popularizing.
硅片表面污染的原因
Reasons for surface contamination of silicon wafers

晶片表面层原子因垂直切片方向的化学键被破坏而成为悬空键，形成表面附近的自由力场，尤其磨片是在铸铁磨盘上进行，所以铁离子的污染更加严重。同时，由于磨料中的金刚砂粒径较大，造成磨片后的硅片破损层较大，悬挂键数目增多，极易吸附各种杂质，如颗粒、有机杂质、无机杂质、金属离子、硅粉粉尘等，造成磨片后的硅片易发生变花、发蓝、发黑等现象，使磨片不合格。
The atoms on the surface layer of the wafer become suspended bonds due to the destruction of the chemical bonds in the vertical direction of the slice, forming a free force field near the surface, especially when the grinding is carried out on the cast iron grinding plate, so the pollution of iron ions is more serious. At the same time, due to the larger size of carborundum particles in the abrasive, the damaged layer of the silicon wafer after grinding is larger, the number of hanging keys is increased, and it is very easy to absorb various impurities, such as particles, organic impurities, inorganic impurities, metal ions, silicon powder dust, etc., resulting in the silicon wafer after grinding is prone to flower, blue, black and other phenomena, making the grinding disc unqualified.
硅片清洗的目的是要除去各类污染物，清洗的洁净程度直接决定着ULSI向更高集成度、可靠性、成品率发展，这涉及到高净化的环境、水、化学试剂和相应的设备及配套工艺，难度越来越大，可见半导体行业中清洗工艺的重要性。
The purpose of silicon wafer cleaning is to remove all kinds of pollutants. The degree of cleaning directly determines the development of ULSI towards higher integration, reliability, and yield. This involves highly purified environment, water, chemical reagents, and corresponding equipment and supporting processes. It is increasingly difficult, which shows the importance of cleaning process in the semiconductor industry.
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